Samsung Electronics showcased a series of cutting-edge semiconductor solutions set to drive digital transformation through the decade, at Samsung Tech Day 2022. 

Loads of exciting stuff was mentioned, but in the press release this is listed:

Samsung’s 1b DRAM is currently under development with plans for mass production in 2023. To overcome challenges in DRAM scaling beyond the 10nm range, the company has been developing disruptive solutions in patterning, materials and architecture, with technology like High-K material well underway. The company then highlighted upcoming DRAM solutions such as 32Gb DDR5 DRAM, 8.5Gbps LPDDR5X DRAM and 36Gbps GDDR7 DRAM that will bring new capabilities to data center, HPC, mobile, gaming and automotive market segments.

Expanding beyond conventional DRAM, Samsung also underscored the importance of tailored DRAM solutions such as HBM-PIM, AXDIMM and CXL that can fuel system-level innovation in better handling the explosive growth of data worldwide.

1,000+ V-NAND Layers by 2030

Since its inception a decade ago, Samsung’s V-NAND technology has progressed through eight generations, bringing 10 times the layer count and 15 times the bit growth. Samsung’s most recent, 512Gb eighth-generation V-NAND features a bit density improvement of 42%, attaining the industry’s highest bit density among 512Gb triple-level cell (TLC) memory products to date. The world’s highest capacity 1Tb TLC V-NAND will be available to customers by the end of the year.

The company also noted that its ninth-generation V-NAND is under development and slated for mass production in 2024. By 2030, Samsung envisions stacking over 1,000 layers to better enable data-intensive technologies of the future.

As AI and big data applications drive the need for faster and higher-capacity memory, Samsung will continue to leapfrog bit density by accelerating the transition to quad-level cell (QLC), while further enhancing power efficiency in support of more sustainable customer operations worldwide.