The company is preparing for mass production of the 1c DDR5 within the year, with volume shipments expected to begin next year. To minimize errors during the process transition and maximize the benefits of the 1b node—recognized for its high-performance DRAM—SK hynix extended the 1b platform to aid in the development of the 1c node. The new DDR5 product offers improved cost efficiency compared to previous generations by incorporating a new material in specific stages of the extreme ultraviolet (EUV) process and optimizing the overall EUV application. Additionally, SK hynix has enhanced productivity by over 30% through design innovations.
The operating speed of the 1c DDR5 has been increased by 11% over the previous generation, reaching 8 Gbps, making it suitable for high-performance data center applications. Power efficiency has also improved by over 9%, which could potentially reduce electricity costs for data centers by up to 30%, particularly as the demand for AI-driven computing continues to rise.
Kim Jonghwan, Head of DRAM Development at SK hynix, stated, ""We are committed to providing differentiated values to customers by applying the 1c technology equipped with the best performance and cost competitiveness to our major next-generation products including HBM, LPDDR6, and GDDR7," said Head of DRAM Development Kim Jonghwan. "We will continue to work towards maintaining the leadership in the DRAM space and position as the most-trusted AI memory solution provider."
